Cap layer for an aluminum copper bond pad

Details Cap layer for an aluminum copper bond pad Cap layer for an aluminum copper bond pad

2006-02-23

2010-02-02

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S459000, C257S758000, C257SE23020, C257SE23033, C438S612000, C438S617000, C438S622000, C438S650000, C438S686000

Reexamination Certificate

active

07656045

ABSTRACT:
A bond pad for an electronic device such as an integrated circuit makes electrical connection to an underlying device via an interconnect layer. The bond pad has a first layer of a material that is aluminum and copper and a second layer, over the first layer, of a second material that is aluminum and is essentially free of copper. The second layer functions as a cap to the first layer for preventing copper in the first layer from being corroded by residual chemical elements. A wire such as a gold wire may be bonded to the second layer of the bond pad.

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PCT/US07/60845 International Search Report and Written Opinion mailed Aug. 26, 2008.

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