Cap for semiconductor device

Details Cap for semiconductor device Cap for semiconductor device

2007-04-24

2007-04-24

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257SE33058, C257SE33070, C257S433000, C257S704000, C257S680000

Reexamination Certificate

active

11216404

ABSTRACT:
In a cap for a semiconductor device in which a light transmissive window is fixed to a cap body provided with a light transmissive opening using low-melting glass as a fixing material so that the light transmissive window covers the light transmissive opening, the low-melting glass is leadless vanadate-series low-melting glass, and the light transmissive window is fixed to the cap body through an eutectic alloy layer formed by an eutectic reaction of vanadium contained in the low-melting glass and metal applied on the surface of the cap body.

REFERENCES:
patent: 2002/0051848 (2002-05-01), Li
patent: 2003/0039573 (2003-02-01), Sherman et al.
patent: 2004/0195580 (2004-10-01), Nishizawa et al.
patent: 2004/0207314 (2004-10-01), Aitken et al.
patent: 2004/0217455 (2004-11-01), Shiono et al.
patent: 6-005990 (1994-01-01), None
patent: 2003-034549 (2003-02-01), None

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