Cantilever-type near-field probe for optical data storage...

Details Cantilever-type near-field probe for optical data storage... Cantilever-type near-field probe for optical data storage...

2005-12-27

2005-12-27

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Forming or treating an article whose final configuration has...

C216S002000, C216S024000, C216S041000, C216S047000, C216S057000, C438S717000, C438S719000

Reexamination Certificate

active

06979406

ABSTRACT:
Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.

REFERENCES:
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 6246054 (2001-06-01), Toda et al.
patent: 6370306 (2002-04-01), Sato et al.
patent: 6768095 (2004-07-01), Niwa et al.
patent: 2002/0036753 (2002-03-01), Kasama et al.

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