Camel-gate field-effect transistor with multiple modulation-dope

Details Camel-gate field-effect transistor with multiple modulation-dope Camel-gate field-effect transistor with multiple modulation-dope

1996-12-11

1998-08-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257212, 257192, 257193, 257194, 257279, 257280, H01L 2972

Patent

active

057897719

ABSTRACT:
The invention relates to the structure of the camel-gate field-effect transistor with multiple modulation-doped channels. The device structure, from the bottom to the top in succession, includes the substrate, the buffer layer, the multiple modulation-doped channels, the thin and complete depletion layer, and the ohmic contact layer. The transistor is characterized by a camel-gate diode, which is composed of the multiple modulation-doped channels, the thin and complete depletion layer and the ohmic contact layer. The gate structure may achieve the high potential height between the gate electrode and the source electrode as well as the high breakdown voltage performance. Furthermore, the use of multiple modulation-doped channels, made of n-type GaAs materials with different thickness and doped concentration, can exhibit excellent properties of high output current, large and linear transconductances.

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