Camel gate field effect transistor device

Details Camel gate field effect transistor device Camel gate field effect transistor device

1983-03-07

1986-05-20

Edlow, Martin H.

357 4, 357 16, 357 58, 357 71, 357 65, 357 232, H01L 2980

Patent

active

045905029

ABSTRACT:
The disclosed device is a field-effect transistor which includes a support region that may typically comprise a substrate having a buffer layer thereon. A semiconductor channel layer of one conductivity type is disposed on the support region. A first highly-doped semiconductor layer of opposite conductivity type is disposed on the channel layer. A second highly-doped semiconductor layer of said one conductivity type is disposed on the first highly-doped semiconductor layer. Source and drain electrodes are disposed in spaced relation, and contact the channel layer. A gate electrode is disposed on the second highly-doped semiconductor layer in the region between the source and drain electrodes. In a preferred embodiment, the source and drain electrodes are disposed on the second highly-doped semiconductor layer and extend through the second and first highly-doped semiconductor layers to the channel layer. The first and second highly-doped layers are thin enough to be fully depleted by adjacent layers. This being the case, it is not necessary to etch these highly-doped layers in the regions between the gate and the source and drain electrodes, since they do not act as current-carrying paths.

REFERENCES:
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 4075651 (1978-02-01), James
patent: 4424525 (1984-01-01), Mimura
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
patent: 4471367 (1984-09-01), Chen et al.
Mimura et al., "A New Field-Effect Transistor with Selectively Doped GaAs/N-Al.sub.x Ga.sub.1-x As Heterojunctions", Japanese Journal of Applied Physics, vol. 19, No. 5, (May, 1980), pp. L225-L227.
Shannon, "A Majority Carrier Camel Diode", Appl. Phys. Lett., vol. 35, pp. 63-65, (Jul. 1979).

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