CAM Cell Circuit having decision circuit

Static information storage and retrieval – Associative memories – Ferroelectric cell

Reexamination Certificate

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Details

C365S154000, C365S203000, C711S108000

Reexamination Certificate

active

06421264

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a CAM (Content Addressable Memory) Cell Circuit which detects whether comparison data match pre-stored data or not.
2. Description of the Related Art
The most similar one to the present invention in conventional CAM Cell Circuit technologies is described by Motorola/IBM as Technical Paper 10.3 of 1955 IEEE International Solid-State Circuits Conference, and has a circuit structure shown in FIG.
1
.
The conventional CAM Cell Circuit comprises a latch circuit
1
having six transistors, inverters
2
,
6
having two transistors, transfer gates
3
,
4
having one or two transistors, and a pull-down transistor
5
. Those circuits are connected to a read/write word line R/W WL, a bit line BL, a bit line BL′, and comparison data lines CompD, CompD′.
When the read/write word line R/W WL becomes active, and then, “0”, and “1”, for example, are Input to the latch circuit
1
from the bit line BL, and the bit line BL′, respectively, the latch circuit
1
preserves “0”, the control terminal side of the transfer gate
3
becomes “0”, and that side of the transfer gate
4
“1”.
Thereafter, when “0”, and “1” are input to the latch circuit
1
from the comparison data lines CompD, CompD′, respectively, “1” of the comparison data line CompD′ is inverted to “0” by the inverter
6
. At this time, as “1” is applied to the control terminal side of the transfer gate
4
, and the gate
4
becomes conductive, “0” is applied to the gate of the pull-down transistor
5
.
Therefore, the pull-down transistor
5
becomes off, and a match line Match “1” to detect that the same data as comparison data has been stored on the latch circuit
1
.
In conventional CAM Cell Circuits such as the above circuit, the latch circuit
1
comprises six transistors, the inverter
2
two transistors, and the transfer gates
3
,
4
one or two transistors. And one pull-down transistor is further installed. That is, the conventional CAM Cell Circuits comprise
13
or
15
transistors in total.
Therefore, there have been a problem that the conventional CAM Cell Circuits are large in the circuit area due to large number of circuit elements, and the large circuit area slows down the operation of the circuit to prevent it from keeplng-up with speeding up of processors in recent years.
SUMMARY OF THE INVENTION
The present invention is made to solve the above-mentioned drawbacks of conventional CAM Cell Circuits. The object of the present invention is to offer a CAM Cell Circuit capable of speeding up of the operation by reducing the number of circuit elements and the circuit area.
In order to achieve the above-mentioned object, a first characteristic of the present invention is as follows:
A CAM Cell Circuit has a memory cell circuit to store data, a decision circuit to decide whether comparison data match stored data on said memory cell circuit or not, and an output circuit to output a decision result made by said decision circuit to a match line, said decision circuit comprising an exclusive-OR circuit connecting in parallel a circuit having first and second transistors in series-connection, and a circuit having third and fourth transistors in series-connection: and a pre-charging circuit having a circuit connecting in series fifth and sixth transistors with different polarity from that of said first to fourth transistors, wherein stored data on said memory cell circuit, and stored data with different polarity from that of the former data are applied to each gate of said second and fourth transistors, respectively, said fifth and sixth transistors simultaneously become on to pre-charge said exclusive-OR circuit to output not-match signal to said match line by controlling said output circuit before the decision operation, and thereafter, comparison data and comparison data with different polarity from that of the former data are applied to each gate of said first and third transistors, respectively, and said exclusive-OR circuit decides whether the stored data on said memory cell circuit match the comparison data to output a match or not-match signal to said match line by controlling said output circuit based on a decision result.
A second characteristic of the present invention is as follows:
A CAM Cell Circuit has a memory cell circuit to store data, a decision circuit to decide whether comparison data match stored data on said memory cell circuit or not, and an output circuit to output a decision result made by said decision circuit to a match line, said decision circuit comprising an exclusive-OR circuit connecting in parallel a circuit having first and second transistors in series-connection, and a circuit having third and fourth transistors in series-connection; and a pre-charging circuit connecting in parallel a circuit having fifth and sixth transistors with different polarity from that of said first to fourth transistors, and a circuit having seventh and eighth transistors with different polarity from that of said first to fourth transistors, wherein stored data on said memory cell circuit, and stored data with different polarity from that of the former data are applied to each gate of said fifth and seventh transistors, respectively, stored data on said memory cell circuit and stored data with different polarity from that of the former data are applied to each gate of said second and fourth transistors, respectively, either said circuit having the fifth and sixth transistors in series-connection or said circuit having the seventh and eighth transistors in series-connection becomes on to pre-charge said exclusive-OR circuit to output not-match signal to said match line by controlling said output circuit before decision operation, and thereafter, comparison data and comparison data with different polarity from that of the former data are applied to each gate of said first and third transistors, respectively, said exclusive-OR circuit decides whether the stored data on said memory cell circuit match the comparison data to output a match or not-match signal to said match line by controlling said output circuit based on a decision result.
A third characteristic of the present invention is as follows:
A CAM Cell Circuit has a memory cell circuit to store data, a decision circuit to decide whether comparison data match stored data on said memory cell circuit or not, and an output circuit to output a decision result made by said decision circuit to a match line, said decision circuit comprising an exclusive-OR circuit having first and second transistors connected together at each drain; and a pre-charging circuit connecting in series fourth and fifth transistors with different polarity from that of said first and second transistors, wherein stored data on said memory call circuit, and stored data with different polarity from that of the former data are applied to each source of said first and second transistors, respectively, said fourth and fifth transistors simultaneously become on to pre-charge said exclusive-OR circuit to output not-match signal to said match line by controlling said output circuit before decision operation, and thereafter, comparison data and comparison data with different polarity from that of the former data are applied to each gate of said first and second transistors, respectively, and said exclusive-OR circuit decides whether the comparison data match the stored data on said memory cell circuit to output a match or not-match signal to said match line by controlling said output circuit based on a decision result.
A fourth characteristic of the present invention is as follows:
A CAM Cell Circuit has a memory cell circuit to store data, a decision circuit to decide whether comparison data match stored data on said memory cell circuit or not, and an output circuit to output a decision result made by said decision circuit to a match line, said decision circuit comprising an exclusive-OR circuit having first and second transistors connected together at each drain; and a pre-charging circuit

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