Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2004-10-13
2009-06-02
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S005000
Reexamination Certificate
active
07541121
ABSTRACT:
A system and method of calibrating optical line shortening measurements, and lithography mask for same. The lithography mask comprises a plurality of gratings, with a calibration marker disposed within each grating. The mask is used to pattern resist on a semiconductor wafer for purposes of measuring and calibrating line shortening. The pattern on the wafer is measured and compared to measurements made of the pattern on the mask. The difference gives the amount of line shortening due to flare, and may be used to calibrate line shortening measurements made using optical measurement tools.
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Fraser Stewart A
Huff Mark F
Infineon - Technologies AG
Slater & Matsil L.L.P.
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