Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2007-09-24
2009-11-03
Choe, Henry K (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S12400D
Reexamination Certificate
active
07612612
ABSTRACT:
Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies.
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Lee See Taur
Staszewski Robert Bogdan
Bassuk Lawrence J.
Brady W. James
Choe Henry K
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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