CaF.sub.2 passivation layers for high temperature superconductor

Details CaF.sub.2 passivation layers for high temperature superconductor CaF.sub.2 passivation layers for high temperature superconductor

1988-09-19

1990-10-23

Morgenstern, Norman

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505732, 505730, 427 62, 427 63, 428696, 428930, B05D 512

Patent

active

049652443

ABSTRACT:
A CaF.sub.2 passivation layer is applied on the surface of a superconducting oxide by evaporation which does not disrupt the superconductive properties of the superconducting oxide.

REFERENCES:
patent: 4361114 (1982-11-01), Gurev
patent: 4728621 (1988-03-01), Graf et al.
Bieget et al, "Use of High-Temperature Superconductors in High Speed Electronic Switches With Current Gain", MRS., vol. 99, Nov. 1987, pp. 873-876.
CA110(20): 1,843,924; Manufacture of Ceramic Superconductor Devices with Oxide Passivation Films; Takeuchi et al; Oct. 28, 1988.
CA110(6) 49378K; Passivation of High Te Superconductor Surfaces With Calcium Floride and Bismuth, Aluminum and Silicon Oxides; Hill et al.; 1988.
J. G. Bednorz et al., Z. Phys. B, 64, 189 (1986).
B. A. Biegel, SPIE: High-Tc Superconductivity: Thin Films and Devices, 948, 3 (1988).
C. W. Chu et al., Phys. Rev. Lett., 58, 405 (1987).
R. M. Hazen et al., Phys. Rev. Lett., 60, 1657 (1988).
O. K. Kwon et al., IEEE Electron Dev. Lett., 8, 582 (1987).
R. B. Laibowitz, MRS Bulletin, 14, 58 (1989).
O. Kohno et al., Jpn. J. Appl. Phys., 26, 1653 (1987).
S. Jin et al., Appl. Phys. Lett., 51, 203 (1987).
J. B. Parise and A. W. Sleight et al., J. solid State Chem., 76, 432 (1988).
M. A. Subramanian and A. W. Sleight et al., Nature, 332, 420 (1988).
M. K. Wu et al., Phys. Rev. Lett., 58, 908 (1987).
H. M. Meyer et al., Appl. Phys. Lett., 51, 1118 (1987).
Y. Ichikawa et al., J. Appl. Phys., 27, L381 (1988).
A. W. Sleight et al., Solid State Commun., 17, 27 (1975).
R. J. Cava et al., Nature, 332, 814 (1988).
J. M. Longo et al., J. Solid State Chem., 6, 526 (1973).
D. C. Johnston et al., Phys. Rev. B, 36, 4007 (1987).
P. M. Grant et al., Phys. Rev. Lett., 58, 2482 (1987).
P. K. Gallagher et al., Mat. Res. Bull., 22, 995 (1987).
H. Maeda et al., Jpn. J. Appl. Phys., 27, L209 (1988).
M. A. Subramanian et al., Science, 239, 1015 (1988).
Z. Z. Sheng et al., Nature, 332, 55 (1988).
S. A. Chambers et al., Phys. Rev. B, 35, 634 (1987).
O. Kohno et al., Jpn. J. Appl. Phys., 26, 1653 (1987).
P. Halder et al., Science, 241, 1198 (1988).
Y. Gao et al., in Thin Film Processing and Characterization of High-Temperature Superconductors; Amer. Inst. of Phys. Conf. Proc., No. 165.
J. M. Harper, R. J. Colton, L. E. Feldman, Eds.; New York, NY: 1987; p. 358.

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