Cadmium telluride photovoltaic radiation detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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357 30, 357 61, 357 63, G01T 124

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active

042438853

ABSTRACT:
A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

REFERENCES:
patent: 3582654 (1971-06-01), Meuleman
Siffert et al., "Polarization in Cadmium Telluride Nuclear Radiation Detectors", IEEE Trans. Nucl. Sci., vol. NS-23, No. 1, 2-76, p. 159-170.
Hoschl et al., "Preparation of Cadmium Telluride Single Crystals for Nuclear Detectors", Czech J. Phys. B25, No. 5, 1975, pp. 585.596.
Desnica et al., "Cadmium Telluride Hole Lifetime from the Gamma-Ray and Photoinduced Effects", Chem. Abs. vol. 76, 1972, 78353f.
Scharf, "Exposure Rate Measurements of X- and Gamma-Rays with Silicon Radiation Detectors", Health Phys., vol. 13, 1967, pp. 575-586.

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