Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Patent
1998-05-11
2000-04-11
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
257201, H01L 310328
Patent
active
060490993
ABSTRACT:
A novel indium phosphide (InP) based heterojunction bipolar transistor (HBT) is described. A II-VI compound, cadmium sulfide (CdS), is used as the emitter to improve the emitter injection efficiency and reduce recombination losses. The cadmium sulfide emitter is applied following the epitaxial growth of III-V compound collector and base regions. The large valence band discontinuity (.quadrature.E=0.75 eV) between CdS and InP allows InP to be used for both the base and collector material. Prior to cadmium sulfide deposition, the exposed surfaces of the epitaxial layers can be passivated with sulfur, further reducing the recombination losses.
REFERENCES:
patent: 5488233 (1996-01-01), Ishikawa et al.
patent: 5773850 (1998-06-01), Naniwae
Dauplaise Helen M.
Davis Andrew
Lorenzo Joseph P.
Vaccaro Kenneth
Chaudhuri Olik
Collier Stanton E.
The United States of America as represented by the Secretary of
Wille Douglas A.
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