Cadmium sulfide layers for indium phosphide-based heterojunction

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257201, H01L 310328

Patent

active

060490993

ABSTRACT:
A novel indium phosphide (InP) based heterojunction bipolar transistor (HBT) is described. A II-VI compound, cadmium sulfide (CdS), is used as the emitter to improve the emitter injection efficiency and reduce recombination losses. The cadmium sulfide emitter is applied following the epitaxial growth of III-V compound collector and base regions. The large valence band discontinuity (.quadrature.E=0.75 eV) between CdS and InP allows InP to be used for both the base and collector material. Prior to cadmium sulfide deposition, the exposed surfaces of the epitaxial layers can be passivated with sulfur, further reducing the recombination losses.

REFERENCES:
patent: 5488233 (1996-01-01), Ishikawa et al.
patent: 5773850 (1998-06-01), Naniwae

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Cadmium sulfide layers for indium phosphide-based heterojunction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cadmium sulfide layers for indium phosphide-based heterojunction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cadmium sulfide layers for indium phosphide-based heterojunction will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1178518

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.