Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Patent
1995-06-12
1997-11-18
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
257194, H01L 29778, H01L 310328
Patent
active
056891253
ABSTRACT:
In a Schottky metal junction semiconductor device, a CdS interface layer, having a thickness of under 100 angstroms, is positioned under the Schottky barrier gate of a III-V HEMT, for reducing gate leakage, and for enabling full depletion of the conducting channel. A similar layer is positioned under the insulator of an MIS device having an InP substrate. The CdS layers are deposited from a chemical bath which merely entails a simple, safe and readily controllable additional step in the otherwise conventional manufacturing process of these devices.
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Studtmann et al, App. Phys. Lett 52(15) 11 Apr. 1988 "Pseudomorphic . . . epitaxy" pp. 1249-1251.
Lincot et al, Appl. Phys. Lett 64(5) 31 Jan. 1994 "Epitaxial . . . Solutions" pp. 569-571.
Dauplaise Helen M.
Davis Andrew
Lorenzo Joseph P.
Vaccaro Kenneth
Jackson Jerome
Nathans Robert L.
The United States of America as represented by the Secretary of
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