Cadmium mercury telluride sputtering targets

Details Cadmium mercury telluride sputtering targets Cadmium mercury telluride sputtering targets

1978-11-13

1980-11-04

Parrish, John A.

Plastic and nonmetallic article shaping or treating: processes

Vacuum treatment of work

To degas or prevent gas entrapment

264332, C04B 3550

Patent

active

042319811

ABSTRACT:
Embodiments of a method are disclosed for producing large size cadmium mercury telluride (CMT) sputtering targets of a homogeneous composition. Sputtering targets of CMT having a general formula Cd.sub.x Hg.sub.1-x Te wherein x has values in the range of about 0.14 to 0.60 are prepared by compacting finely divided CMT of a particle size smaller than 150.mu. in a die into a coherent compact having a density of at least 97% theoretical density. CMT with an x value of about 0.14 to about 0.20 preferably is compacted at a die preheat temperature of about 100 to 300.degree. C. and at a compacting pressure of at least about 400 MPa. CMT having an x value of about 0.20 to about 0.60 preferably is compacted at a die preheat temperature of about 300.degree. C. and a compacting pressure of about 160 to 275 MPa. The die may be evacuated to a pressure of less than about 133 Pa absolute prior to compacting.

REFERENCES:
patent: 3558351 (1971-01-01), Foster
patent: 3956452 (1976-05-01), Saito
Zozime et al., "Sputtering of Cd.sub.x Hg.sub.1-x Te Films in Mercury Vapor Plasma", Thin Solid Films, 13(1972) 373-378.

Affiliated with

Also associated with

Rating

Cadmium mercury telluride sputtering targets does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cadmium mercury telluride sputtering targets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cadmium mercury telluride sputtering targets will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1645085