Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1997-09-29
1999-09-07
Chapman, Mark
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136265, 438 57, 438 85, H01L 3100
Patent
active
059481765
ABSTRACT:
The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.
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Bhattacharya Raghu N.
Contreras Miguel A.
Keane James
Noufi Rommel
Ramanathan Kannan V.
Chapman Mark
Midwest Research Institute
Richardson Ken
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