Metal working – Plural diverse manufacturing apparatus including means for... – Common reciprocating support for spaced tools
Patent
1976-09-16
1977-12-27
Dost, Gerald A.
Metal working
Plural diverse manufacturing apparatus including means for...
Common reciprocating support for spaced tools
H01L 700
Patent
active
040646211
ABSTRACT:
A higher power infrared Pb.sub.1-x Sn.sub.x Te diode laser that is tunable at this high output power at all wavelengths from 6.5 - 32 microns, particularly 6.5 - 9 microns. The diode laser has a P-type laser cavity with a degenerate carrier concentration. A low carrier concentration N-type region is adjacent the P-type region. The N-type region has unique characteristics inherent to a cadmium diffusion from an external source at a temperature of about 350.degree. - 500.degree. C. The cadmium diffusion N-type region forms a flat PN junction with the P-type laser cavity. Dislocation density in the monocrystal forming the completed laser body, even after the cadmium diffusion, is not noticeably higher than in the monocrystal from which the laser is made. A method of forming such a laser, using a short time, low temperature cadmium diffusion process, is claimed.
REFERENCES:
reduction of Carrier Concentration in Pb.sub.1-x Sn.sub.x Te by Cd diffusion and Doping with Zn; Linden, J. Electrochem. Soc.; vol. 120, pp. 1131-1134 (Aug. 1973).
Dost Gerald A.
General Motors Corporation
Wallace Robert J.
LandOfFree
Cadmium diffused Pb.sub.1-x Sn.sub.x Te diode laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cadmium diffused Pb.sub.1-x Sn.sub.x Te diode laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cadmium diffused Pb.sub.1-x Sn.sub.x Te diode laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1031937