Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1997-11-12
1998-11-03
Nguyen, Tan T.
Static information storage and retrieval
Associative memories
Ferroelectric cell
36518902, 36523002, 711128, G11C 1504
Patent
active
058318895
ABSTRACT:
A method is for manufacturing a cache memory device for writing cache data into and reading cache data from a storing region of a memory cell array designated according to a portion of an address signal and a selection signal from a 1/2 multiplexer. In a first step of the method, a common base of the 1/2 multiplexer applicable to both a direct-map type cache memory device and a set-associative type cache memory device is manufactured. Then, in a second step of the method, one of the direct-map type cache memory device and the set-associative type cache memory device is manufactured using the common base of the 1/2 multiplexer. The 1/2 multiplexer included in the direct-map type cache memory device outputs another portion of the address signal as the selection signal, and the 1/2 multiplexer included in the set-associative type cache memory device selectively outputs one of a write way signal and a read way signal as the selection signal according to a write enable signal.
REFERENCES:
patent: 4894770 (1990-01-01), Ward et al.
patent: 5226009 (1993-07-01), Arimoto
patent: 5226147 (1993-07-01), Fujishima et al.
patent: 5367653 (1994-11-01), Coyle et al.
Fujitsu Limited
Nguyen Tan T.
LandOfFree
Cache memory device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cache memory device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cache memory device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-697406