Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2006-02-07
2006-02-07
Elms, Richard (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S154000, C365S156000, C711S108000
Reexamination Certificate
active
06995997
ABSTRACT:
A CAM cell with masking made in the form of an integrated circuit, including a first storage cell including a first transistor, first and second inverters in anti-parallel, and a second transistor; a comparison cell, including third and fourth transistors controlling a fifth transistor, connected in series with a sixth inhibiting transistor to a result line; and a second storage cell, including a seventh transistor in series with two inverters in anti-parallel and an eighth transistor, the second storage cell controlling the inhibiting transistor. The first, second, seventh, and eighth transistors may be N-channel transistors, and the third, fourth, fifth, and sixth transistors may be P-channel transistors.
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Elms Richard
Jorgenson Lisa K.
Morris James H.
Nguyen N.
STMicroelectronics S.A.
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