Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-12-17
2000-09-05
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257770, H01L 2976
Patent
active
061147656
ABSTRACT:
A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in, the form of a substitutional solid solution.
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S.E. Babcock et al., "Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation", pp. 6898-6905, American Institute of Physics, J. Appl. Phys., vol. 53, No. 10, Oct. 1982.
T.P. Nolan et al., Modeling of agglomeration in polycrystalline thin films: Application Institute of Physics, J. Appl. Phys., vol. 71, No. 2, Jan. 15, 1992.
Z.G. Xiag et al., "TiSi.sub.2 Thin Films Formed on Crystalline and Amorphous Silicon", pp. 167-173, Materials Research Society, Mat. Res. Soc. Symp. Proc., vol. 181, 1990.
Fujii Kunihiro
Inoue Ken
Mikagi Kaoru
Miyakawa Kuniko
Eaton Kurt
Fahmy Wael
NEC Corporation
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