1985-02-21
1988-08-23
Larkins, William D.
357 59, 357 71, 357 68, 357 45, H01L 2704, H01L 2350, H01L 2352
Patent
active
047664762
ABSTRACT:
Base cells are employed for construction of electronic circuits by use of CMOS technology. The base cells are formed of two transistors and of first interconnects and second interconnects positioned perpendicular to one another. The first interconnects are formed of polysilicon and run parallel to a same side edge of the transistors. The second interconnects are formed of metal and run either between the two transistors or over the two transistors. Desired electronic circuits can be constructed by electrical connection via contacts between the interconnects and the transistor electrodes, and by a multiple side-by-side positioning of the base cells. The base cell has a simple geometrical structure which can be defined with software. Individual base cells can be positioned side-by-side without great modifications in order to realize electronic circuits.
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CAD for VLSI, by H. G. Schwartzel, Springer Verlag 1982, pp. 63-76.
Fuchs Paul
Schallenberger Burghardt
Stockinger Josef
Larkins William D.
Siemens Aktiengesellschaft
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