C-MOS device and a process for manufacturing the same

Details C-MOS device and a process for manufacturing the same C-MOS device and a process for manufacturing the same

1989-01-06

1992-01-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437 90, H01L 213205, H01L 2176

Patent

active

050791834

ABSTRACT:
Element separate regions consisting of insulation material are provided on a semiconductor substrate of a first conductivity type. Element regions which respectively consist of monocrystalline semiconductor layers of the first and second conductivity types are provided in at least two adjacent regions among a plurality of island substrate regions separated by the element separate regions. An impurity layer is provided in that portion between the substrate and at least one of the element regions.

REFERENCES:
patent: 3861968 (1975-01-01), Magdo et al.
patent: 4101350 (1978-07-01), Possley et al.
patent: 4145803 (1979-03-01), Tasch, Jr.
patent: 4319395 (1982-03-01), Lund
patent: 4412868 (1983-11-01), Brown et al.
patent: 4536945 (1985-08-01), Gray et al.
patent: 4566025 (1986-01-01), Jastrzedski et al.
patent: 4571818 (1986-02-01), Robinson et al.
European Patent Application No. 0084265.
IBM Technical Disclosure Bulletin, vol. 24, Dec. 1981, pp. 3684-3688.
IBM Tech. Bull., vol. 24, No. 7B, Dec. 1981-Hansen et al., pp. 3684-3688.

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