C implants for improved SiGe bipolar yield

Details C implants for improved SiGe bipolar yield C implants for improved SiGe bipolar yield

2005-12-20

2005-12-20

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S200000, C257S592000

Reexamination Certificate

active

06977398

ABSTRACT:
A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region, the sub-collector region, the extrinsic base regions, and the collector-base junction region. In a preferred embodiment each of the aforesaid regions include C implants.

REFERENCES:
patent: 6492711 (2002-12-01), Takagi et al.
patent: 6720590 (2004-04-01), Coolbaugh et al.
patent: 6750119 (2004-06-01), Chu et al.
patent: 6750484 (2004-06-01), Lippert et al.

Affiliated with

Also associated with

Rating

C implants for improved SiGe bipolar yield does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with C implants for improved SiGe bipolar yield, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and C implants for improved SiGe bipolar yield will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3509849