C-axis oriented high temperature superconductors deposited onto

Details C-axis oriented high temperature superconductors deposited onto C-axis oriented high temperature superconductors deposited onto

1994-04-12

1995-05-23

Ryan, Patrick J.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Substrate for supporting superconductor

428688, 428689, 428700, 505701, 505238, B32B 900

Patent

active

054182158

ABSTRACT:
c-axis oriented microwave quality HTSC films are deposited onto single crystals of gadolinium gallium garnet (GGG) using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure, a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sub.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the GGG exhibit a mismatch of less than 2.5 percent with the a and b lattice parameters of the HTSC.

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Nakajima et al., Appl. Phys. Lett 53(15), Oct. 10, 1988 pp. 1437-1439.

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