Static information storage and retrieval – Floating gate – Particular biasing
Patent
1983-07-11
1986-01-21
Hecker, Stuart N.
Static information storage and retrieval
Floating gate
Particular biasing
365195, 365189, G11C 700, G11C 1140
Patent
active
045660808
ABSTRACT:
A memory system of the EEPROM type in which a separate writing circuit is provided for each cell of a related byte thereby permitting one cell to be charged while the other can be simultaneously discharged.
REFERENCES:
patent: 4090258 (1978-05-01), Cricchi
patent: 4149270 (1979-04-01), Cricchi et al.
patent: 4354256 (1982-10-01), Miyasaka
patent: 4377857 (1983-03-01), Tickle
patent: 4477884 (1984-10-01), Iwahashi et al.
Fang Sheng
Rao Kameswara K.
Gossage Glenn A.
Hecker Stuart N.
Mayer Robert T.
Signetics Corporation
LandOfFree
Byte wide EEPROM with individual write circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Byte wide EEPROM with individual write circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Byte wide EEPROM with individual write circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2301477