Butt-jointed built-in semiconductor laser

Details Butt-jointed built-in semiconductor laser Butt-jointed built-in semiconductor laser

1983-06-09

1986-05-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 45, 372 96, H01S 319

Patent

active

045891176

ABSTRACT:
A semiconductor laser, in which active layers are provided on the top surface of the mesa and the remainder surface in a substrate as a first semiconductor layer. Second semiconductor layers are provided on the active layers to such a thickness that the second semiconductor layer may not reach the first semiconductor layer on the mesa. Third semiconductor layers are provided on the second semiconductor layer to such a thickness that the third semiconductor layers may be flush with or higher than the first semiconductor layer on the mesa, so that the first semiconductor layer on the top surface of the mesa is just jointed with the third semiconductor layer on the remainder surface in the substrate.

REFERENCES:
patent: 4464762 (1984-08-01), Furuya et al.

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