Burst random access memory employing sequenced banks of local tr

Details Burst random access memory employing sequenced banks of local tr Burst random access memory employing sequenced banks of local tr

1995-11-30

1997-04-01

Swann, Tod R.

Static information storage and retrieval

Magnetic bubbles

Guide structure

395427, 395431, 36523003, 36523006, 36523008, G06F 1300

Patent

active

056175558

ABSTRACT:
A burst dynamic random access memory (DRAM) (10) is disclosed having memory cells arranged in a number of quadrants (22), each quadrant including local I/O lines (24) for accessing the memory cells therein. The local I/O lines (24) of each quadrant are commonly coupled to global I/O lines (26) by tri-state driver banks (30). According to a row address and a first portion of a column address, a row decoding circuit (36) and column decoding circuit (40) couple one set of local I/O lines (24) within each quadrant (22) to selected columns within the quadrants (22). A bank sequencer (48) receives a second portion of the column address and generates burst sequence of different bank select signals. Each bank select signal enables a different set of tri-state driver banks (30). The enabled tri-state driver banks (30) provide a data path between the local I/O lines (24) and the global I/O lines. By enabling a different combination of tri-state driver banks (30) for each bank select signal, burst access is provided to the burst DRAM (10).

REFERENCES:
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patent: 5289584 (1994-02-01), Thome et al.
patent: 5390149 (1995-02-01), Vogley et al.
patent: 5392239 (1995-02-01), Margulis et al.
patent: 5440523 (1995-08-01), Joffe
patent: 5442588 (1995-08-01), Runas
patent: 5506810 (1996-04-01), Runas
patent: 5526320 (1996-06-01), Zagar et al.

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