Burst EDO memory device address counter

Static information storage and retrieval – Addressing – Sync/clocking

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36523002, 3652365, 365236, G11C 800

Patent

active

056755490

ABSTRACT:
A counter comprised of two flip flops and a multiplexer produces a sequential or interleaved address sequence. The addresses produced are used to access memory elements in a Burst Extended Data Output Dynamic Random Access Memory (Burst EDO or BEDO DRAM). Input addresses in combination with a sequence select signal are logically combined to produce a multiplexer select input which selects between true and compliment outputs of a first flip flop to couple to an input of a second flip flop to specify a toggle condition for the second flip flop. Outputs of the counter are compared with outputs of an input address latch to detect the end of a burst sequence and initialize the device for another burst access. A transition of the Read/Write control line during a burst access will terminate the burst access and initialize the device for another burst access.

REFERENCES:
patent: 4344156 (1982-08-01), Eaton et al.
patent: 4484308 (1984-11-01), Lewandowski
patent: 4562555 (1985-12-01), Ouchi et al.
patent: 4567579 (1986-01-01), Patel et al.
patent: 4575825 (1986-03-01), Ozaki et al.
patent: 4603403 (1986-07-01), Toda
patent: 4618947 (1986-10-01), Tran et al.
patent: 4649522 (1987-03-01), Kirsch
patent: 4685089 (1987-08-01), Patel et al.
patent: 4707811 (1987-11-01), Takemae et al.
patent: 4788667 (1988-11-01), Nakano
patent: 4870622 (1989-09-01), Aria et al.
patent: 4875192 (1989-10-01), Matsumoto
patent: 5058066 (1991-10-01), Yu
patent: 5126975 (1992-06-01), Handy et al.
patent: 5267200 (1993-11-01), Tobita
patent: 5268865 (1993-12-01), Takasugi
patent: 5280594 (1994-01-01), Young et al.
patent: 5305284 (1994-04-01), Iwase
patent: 5319759 (1994-06-01), Chan
patent: 5325330 (1994-06-01), Morgan
patent: 5325502 (1994-06-01), McLaury
patent: 5349566 (1994-09-01), Merritt et al.
patent: 5357469 (1994-10-01), Sommer et al.
patent: 5373227 (1994-12-01), Keeth
patent: 5379261 (1995-01-01), Jones, Jr.
patent: 5392239 (1995-02-01), Margulis et al.
patent: 5410670 (1995-04-01), Hansen et al.
patent: 5452261 (1995-09-01), Chung et al.
patent: 5457659 (1995-10-01), Schaefer
patent: 5483498 (1996-01-01), Hotta
patent: 5485428 (1996-01-01), Lin
patent: 5513148 (1996-04-01), Zagar
patent: 5526320 (1996-06-01), Zagar et al.
"DRAM 1 Meg X 4 DRAM 5VEDO Page Mode", 1995 DRAM Data Book,, pp. 1-1 thru 1-30,, (Micron Technology, I).
"Rossini, Pentium, PCI-ISA, Chip Set", Symphony Laboratories,, entire book,.
"Hyper Page Mode DRAM", 8029 Electronic Engineering, 66, No. 813, Woolwich, London, GB, pp. 47-48, (Sep. 1994).
"Mosel-Vitelic V53C8257H DRAM Specification Sheet, 20 pages, Jul. 2, 1994",.
Dave Bursky, "Novel I/O Options and Innovative Architectures Let DRAMs Achieve SRAM Performance; Fast DRAMS can be swapped for SRAM Caches", Electronic Design, vol. 41, No. 15, Cleveland, Ohio, pp. 55-67, (Jul. 22, 1993).
Samsung Electronics, "Sansung Synchronous DRAM", Mar. 1993, pp. 1-16.
Oki Electric Ind. Co., Ltd, "Burst DRAM Fuction & Pinout", 2nd presentation, Item #619, Sep., 1994.
Toshiba, "Pipelined Burst DRAM", Dec. 1994, JEDEC JC-42.3 Hawaii.
Toshiba America Electronic Componants, Inc., "Application Specific DRAM, 1994", pp. C-178, C-260, C218.
Micron Semiconductor, Inc., "Synchronous DRAM 2 MEG.times.8 SDRAM", pp. 2-43 through 2-83.
Toshiba America Electronic Componants, Inc. "4M DRAM 1991", pp. A-137-A-159.
Micron Semiconductor, Inc., "1994 DRAM Data Book", entire book.
Shiva P. Gowni, et al., "A 9NS, 32K X 9, BICMOS TTL Synchronous Cache RAM With Burst Mode Access", IEEE, Custom Integrated Circuits Conference, pp. 781-786, (Mar. 3, 1992).

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