Burst EDO memory device

Static information storage and retrieval – Addressing – Sync/clocking

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Details

3652385, 36518901, G11C 800

Patent

active

056616953

ABSTRACT:
An integrated circuit memory device is designed for high speed data access and for compatibility with existing memory systems. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. Transitions of the Read/Write control line during a burst access will terminate the burst access, reset the burst length counter and initialize the device for another burst access. The device is compatible with existing Extended Data Out DRAM device pinouts, Fast Page Mode and Extended Data Out Single In-Line Memory Module pinouts, and other memory circuit designs.

REFERENCES:
patent: 4870622 (1989-09-01), Aria et al.
patent: 5392239 (1995-02-01), Margulis et al.
patent: 5410670 (1995-04-01), Hansen et al.
patent: 5452261 (1995-09-01), Chung et al.
patent: 5526320 (1996-06-01), Zagar et al.
"DRAM 1 Meg X 4 DRAM 5VEDO Page Mode", 1995 DRAM Data Book, pp. 1-1 thru 1-30, (Micron Technology, I).
"Rossini, Pentium, PCI-ISA, Chip Set", Symphony Laboratories, entire book.
"4DRAM 1991", Toshiba America Electronic Components Inc., pp. A-137-A-159.
"Burst DRAM Function & Pinout", Oki Electric Ind, Co., Ltd., 2nd Presentation, Item# 619, (Sep. 1994).
"Hyper Page Mode DRAM", 8029 Electronic Engineering, 66, No. 813, Woolwich, London, GB, pp. 47-48, (Sep. 1994).
"Mosel-Vitelic V53C8257H DRAM Specification Sheet, 20 pages, Jul. 02, 1994".
"Pipelined Burst DRAM", Toshiba, JEDEC JC 42.3 Hawaii, (Dec. 1994).
"Samsung Synchronous DRAM", Samsung Electronics, pp. 1-16, (Mar. 1993).
"Synchronous DRAM 2 MEG .times. 8 SDRAM", Micron Semiconductor, Inc., pp. 2-43 through 2-8.
Dave Bursky, "Novel I/O Options and Innovative Architectures Let DRAMs Achieve SRAM Performance; Fast DRAMS can be swapped for SRAM Caches", Electronic Design, vol. 41, No. 15, Cleveland, Ohio, pp. 55-67, (Jul. 22, 1993).
Shiva P. Gowni, et al., "A 9NS, 32K X 9, BICMOS TTL Synchronous Cache RAM with Burst Mode Access", IEEE, Custom Integrated Circuits Conference, pp. 781-786, (Mar. 3, 1992).

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