Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode – With means to limit area of breakdown
Patent
1991-07-30
1993-08-31
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
With means to limit area of breakdown
257551, H01L 2990
Patent
active
052412130
ABSTRACT:
A buried Zener diode has an auxiliary Zener junction access path in parallel with the force anode/cathode path. Unlike the force anode/cathode path, the auxiliary path is effectively by-passed by the current flowing between the force anode and cathode during circuit operation, so that there is no accumulation of significant resistance-current products that would otherwise mask the Zener voltage. The Zener diode has an anode region disposed in a first surface portion of a substrate. A `force` anode is formed on a first surface portion of the anode region. A `sense` anode is disposed on a second surface portion of the anode region spaced apart from the force anode. A first cathode region is disposed in a second surface portion of the substrate spaced apart from the anode region, while a sense cathode region is disposed in a third surface portion of the substrate spaced apart from each of the anode region and the first cathode region. A `force` cathode is disposed on the first cathode region and a `sense` cathode is disposed on the sense cathode region. A first N-type region is buried beneath and contiguous with the force cathode region and a second N-type region is buried beneath and contiguous with the sense cathode region. A third N-type region is buried beneath and contiguous with the force anode region. This third buried region has a first portion which defines a buried Zener junction with the anode region and extends to and is contiguous with the first buried region. A portion of the third provides a by-pass path to enable Zener voltage to be measured absent voltage drops of the main current flow path.
REFERENCES:
patent: 4451839 (1984-05-01), Nelson
patent: 4646114 (1987-02-01), Vinn et al.
patent: 4910158 (1990-03-01), Anderson
patent: 5055902 (1991-10-01), Lambert
Bowers Courtney A.
Harris Corporation
James Andrew J.
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