Buried waveguide window regions for improved performance semicon

Details Buried waveguide window regions for improved performance semicon Buried waveguide window regions for improved performance semicon

1987-11-30

1989-10-17

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

048752169

ABSTRACT:
A window laser having at least one window region with a transparent waveguide layer optically coupled to an active region generating lightwaves. The waveguide layer is characterized by a broader guided transverse mode for the lightwaves than the active region and may have a thickness which is greater than the active region, a refractive index difference with respect to cladding layers which is less than a refractive index difference between the active region and the cladding layers, or both. The waveguide layer may be coupled to the active region via a transition region characterized by a gradual change in the guide mode width of the lightwaves, such as from a tapered increase in thickness of the waveguide layer in a direction away from the active region. The preferred method of making window region having these transparent waveguides is impurity induced disordering, in which the interfaces between active region and cladding layers is disordered by impurity species to produce the waveguide layer with increased bandgap and a graded transverse refractive index profile. The laser is characterized by a high power output beam with reduced far field transverse divergence.

REFERENCES:
patent: 4511408 (1985-04-01), Honoyak, Jr.
patent: 4546480 (1985-10-01), Burnham et al.
patent: 4639275 (1987-01-01), Holonyak, Jr.
H. Blauvelt et al, "Large Optical Cavity AlGaAs Buried Heterostructure Window Lasers", Applied Physics Letters, vol. 40(12), pp. 1029-1031 (Jun. 15, 1982).
H. Yonezu et al, "An AlGaAs Window Structure Laser", IEEE Journal of Quantum Electronics, vol. QE-15(8), pp. 775-781 (Aug. 1979).
Y. Suzuki et al, "Fabrication of GaAlAs `Window Stripe` Multi-Quantum-Well Heterostructure Lasers Utilising Zn Diffusion-Induced Alloying", Electronic Letters, vol. 20(9), pp. 383-384 (Apr. 26, 1984).
T. Murakami et al, "High-Power AlGaAs Laser with a Thin Tapered-Thickness Active Layer", Electronics Letters, vol. 22(4), pp. 217-218 (Feb. 13, 1986).
K. Meehan et al, "Disorder of an Al.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion", Applied Physics Letters, vol. 45(5), pp. 549-551 (Sep. 1, 1984).
R. L. Thorton et al, "Highly Efficient, Long Lived AlGaAs Lasers Fabricated by Silicon Impurity Induced Disordering", Applied Physics Letters, vol. 49(3), pp. 133-134 (Jul. 21, 1986).
G. R. Antell, "The Diffusion of Silicon in Gallium Arsenide", Solid-State Electronics, vol. 8, pp. 943-946 (1965).
E. Omura et al, "Closed-Tube Diffusion of Silicon in GaAs from Sputtered Silicon Film", Electronic Letters, vol 22(9), pp. 496-498 (Apr. 24, 1986).
T. Onuma et al, "Study of Encapsulants for Annealing Si-Implanted GaAs", Journal of Electrochemical Society, vol. 129(4), pp. 837-840 (Apr., 1982).
M. E. Greiner et al, "Diffusion of Silicon in Gallium Arsenide Using Rapid Thermal Processing: Experiment and Model", Applied Physics Letters, vol. 44(8), pp. 750-752 (Apr. 15, 1984).
K. L. Kavanaugh et al, "Silicon Diffusion at Polycrystalline-Si/GaAs Interfaces", Applied Physics Letters, vol. 47(11), pp. 1208-1210 (Dec. 1, 1985).
K. L. Kavanaugh et al, "The Polycrystalline-Si Contact to GaAs", Journal of the Electrochemical Society, vol. 133(6), pp. 1176-1179 (Jun., 1986).
N. Holonyak, Jr. et al, "Quantum-Well Heterostructure Lasers", IEEE Journal of Quantum Electronics, vol. QE-16(2), pp. 170-186 (Feb., 1980).
R. L. Thornton et al, "High Power (2.1W) 10-Stripe AlGaAs Laser Arrays with Si Disordered Facet Windows", Applied Physics Letters, vol. 49(23), pp. 1572-1574 (Dec. 8, 1986).
R. L. Thornton et al, "Impurity Induced Disordering of Heterojunction Interfaces: Phenomenology and Laser Device Applications", Proceedings of SPIE, vol. 797, pp. 176-184 (Mar. 23-25, 1987).
R. L. Thornton et al, "Low Threshold Planar Buried Heterostructure Lasers Fabricated by Impurity-Induced Disordering", Applied Physics Letters, vol. 47(12), pp. 1239-1241, (Dec. 15, 1985).

Affiliated with

Also associated with

Rating

Buried waveguide window regions for improved performance semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried waveguide window regions for improved performance semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried waveguide window regions for improved performance semicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1747907