Buried-waveguide-type light receiving element and...

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

Reexamination Certificate

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C385S129000, C385S130000, C385S132000, C257S013000, C257S017000, C257S018000, C257S019000, C257S020000, C257S021000, C257S079000, C257S080000, C257S081000, C257S082000

Reexamination Certificate

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07415185

ABSTRACT:
A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refractive index equal to or higher than that of the n-type cladding layer and undoped or having an impurity concentration of 1×1017cm−3or less, lower than the impurity concentration in the n-type light guide layer, a light absorption layer having a refractive index higher than that of the i-light guide layer, a p-type light guide layer, and a p-type cladding layer are successively layered in mesa form, from the Fe—InP substrate, and a blocking layer on the Fe—InP substrate and in which side walls of the waveguide are embedded.

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patent: 7031587 (2006-04-01), Nakaji et al.
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Ishimura et al., “40Gbps Waveguide Photodiode for Flip-Chip Assembly”, Extended Abstracts No. 3, (The 49thSpring Meeting, 2002),The Japan Society of Applied Physics and Related Societies, pp. 1152 (Mar. 2006).
Shimizu et al., “Waveguide Avalanche Photodiodes for 40 Gbps Communication”, IEICE Technical Report, OCS2006-40, OPE2006-93, LQE2006-82, pp. 11-15 (Oct. 2006).

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