Buried-type semiconductor laser device

Details Buried-type semiconductor laser device Buried-type semiconductor laser device

1992-12-17

1994-06-28

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053253850

ABSTRACT:
This invention provides a buried-type semiconductor laser device that operates stably and reliably at a high temperature for a prolonged period of time. A buried-type semiconductor laser device according to the invention comprises a semiconductor substrate 2, a first ridge mesa 8 formed on said substrate 2, said first ridge mesa 8 being covered on the top with at least an active layer 4 and provided at both lateral edges with current blocking layers 9, 10 of p-n reverse junction semiconductors arranged along the active layer for confining electric currents, and a second ridge mesa 11 formed by said first ridge mesa 8 and said current blocking layers 9, 10 and provided at both lateral edges with a semi-insulating layer 13.

REFERENCES:
patent: 4984244 (1991-01-01), Yamamoto et al.

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