Buried type semiconductor laser device

Details Buried type semiconductor laser device Buried type semiconductor laser device

1986-08-15

1989-06-13

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, H01S 318

Patent

active

048399000

ABSTRACT:
A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

REFERENCES:
patent: 4048627 (1977-07-01), Ettenbert et al.
patent: 4597085 (1986-06-01), Mito et al.
patent: 4730329 (1988-03-01), Yoshida et al.
Higuchi et al.: Laser Kenkyu vol. 13, p. 156, 1985; "Leakage Current in p-Substrate 1.3 .mu.mm InGaAsP/InP Buried Crescent (PBC) Lasers".
R. Hirano et al.: Appl. Phys. Lett 43(2), Jul. 15, 1983, "Position of the Degradation & the Improved/Structure for the Buried Crescent InGaAsP Lasers".
Japanese Journal of Applied Physics, vol. 16, No. 8, Aug. 1977; "AlGaAs-GaAs Semiconductor Ring Laser"; pp. 1395-1398.
N. K. Dutta: J. Appl. Phys. 53(11), Nov. 1982; "Calculated Threshold Current of GaAs Quantum Well Lasers"; pp. 7211-7214.
H. Iwamura: Electronics Letters, vol. 19, No. 5, Mar. 3, 1983; "Dynamic Behaviour of a GaAs-AlGaAs MQW Laser Diode"; pp. 180-181.

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