Buried type semiconductor laser device

Details Buried type semiconductor laser device Buried type semiconductor laser device

1989-02-22

1990-03-13

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

049088319

ABSTRACT:
A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

REFERENCES:
H. Higuchi et al., Laser Kenkyu, (1985), 13:156-64.
E. Oomura et al., IEEE J. Quant. Elec., (1984), QE20:866-74.
R. Hirano et al., Appl. Phys. Lett., (1983), 43:187-89.
N. Matsumoto et al., Jap. J. Appl. Phys., (1977), 16:1395-98.
W. T. Tsang, Appl. Phys. Lett., (1981), 39:786-88.
N. K. Dutta, J. Appl. Phys., (1982), 53:7211-14.
H. Iwamura et al., Elec. Lett., (1983), 19:180-81.

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