Buried stripe type semiconductor laser device

Details Buried stripe type semiconductor laser device Buried stripe type semiconductor laser device

1991-08-30

1994-08-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

053352416

ABSTRACT:
A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the <011> direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.

REFERENCES:
patent: 5020510 (1991-12-01), Konushi et al.
Patent Abstracts of Japan, vol. 12, No. 304, (E-646) [3151] (18th Aug. 1988).
Patent Abstracts of Japan vol. 9, No. 270, (E-353) [1993] (Oct. 26, 1985).
Patent Abstracts of Japan, vol. 14, No. 95, (E-089) (Feb. 21, 1990).
Yamamoto et al., Optoelectronics (Dec. 1988) 3(2):189-195.

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