Buried stripe-structure semiconductor laser

Details Buried stripe-structure semiconductor laser Buried stripe-structure semiconductor laser

1985-03-25

1988-01-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

047196335

ABSTRACT:
A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.

REFERENCES:
patent: 4236122 (1980-11-01), Cho et al.
patent: 4429397 (1984-01-01), Sugimoto et al.
"Operation Characteristics of Buried-Stripe Gain AsP/InP DH Lasers Made by Melt-Back Method", Journal of Applied Physics, vol. 50, (1979), Nr. 12 N.Y.
"Lasing Properties of InGaAsP Buried Heterojunction Lasers Grown on a Mesa Substrate" 320 Applied Physics Letters, vol. 41 (1982), N.Y.
Patents Abstracts of Japan, vol. 7, No. 200 (E-196), Sept. 3, 1983. (Nippon Denki K. K.) 10-06-1983, Whole Abstract.

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