Buried sense line V-groove MOS random access memory

Details Buried sense line V-groove MOS random access memory Buried sense line V-groove MOS random access memory

1977-07-29

1982-10-05

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 24, 357 45, 357 55, 357 59, 357 89, 357 91, 365183, H01L 2978, H01L 2906, H01L 2710, H01L 2904

Patent

active

043530826

ABSTRACT:
A random access memory device which is comprised of a matrix of individual MOS random access memory cells, the individual cells utilizing a sense region formed by a diffused layer of heavily doped silicon material underlying the storage and transfer regions, the storage region being formed at the surface of the device and containing a double implant for increasing the storage capacity of the cell, the transfer region being formed along the edge of a V-groove anisotropical etch which extends from the surface of the device adjacent the storage region and into the diffused sense region. In one embodiment first and second layers of polycrystalline silicon separated by an insulating layer and deposited at the surface of the cell act as the storage and transfer gates, respectively, the first layer overlying the storage region adjacent the V-groove and the second layer lying within the V-groove and partially overlapping the first layer. In a second embodiment, a single layer of polycrystalline silicon deposited on the surface of the cell and within the V-groove acts as both the storage and transfer gates.

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patent: 4003036 (1977-01-01), Jenne
patent: 4012757 (1977-03-01), Koo
patent: 4060738 (1977-11-01), Tasch et al.
patent: 4062037 (1977-12-01), Togel et al.
Electonics (Jan. 6, 1977), p. 2.
Baker "CCD Array Forms Random-Access Memory", Electronics (Nov. 13, 1975), pp. 138-139.
Dockerty, "Writing Scheme for a CCD Random-Access Memory Array", IBM Tech. Disclosure Bulletin, vol. 19, (7/76), p. 510.
Abbas et al., "Memory Cell Structure", IBM Tech. Disclosure Bulletin, vol. 18, (3/76), p. 3288.

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