Buried semiconductor laser avoiding thyristor action

Details Buried semiconductor laser avoiding thyristor action Buried semiconductor laser avoiding thyristor action

1983-06-21

1985-12-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

045610967

ABSTRACT:
In order to prevent the output characteristic of a semiconductor laser from being saturated at higher temperatures due to the thyristor effect of a combination of the semiconductor layers thereof, an intermediate layer of a conductivity type the same as that of the substrate and opposite that of the first semiconductor layer is provided between the substrate and the first layer. Due to the relatively low carrier density of the intermediate layer, oscillation can be stably carried out even at higher temperatures without triggering the thyristor structure.

REFERENCES:
Hanamitsu et al., "A New (AlGa)As Buried Convex Waveguide Structure Laser with a Truncated Convex Active Region", Topical Meeting on Integrated and Guided Wave Optics, Pacific Grove Ca., USA, Jan. 6-8, 1982, FC3-1-4.
Ishikawa et al., "V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser by One-Step Epitaxy", J. Appl. Phys. 53 (4), Apr. 1982, pp. 2851-2853.

Affiliated with

Also associated with

Rating

Buried semiconductor laser avoiding thyristor action does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried semiconductor laser avoiding thyristor action, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried semiconductor laser avoiding thyristor action will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1483827