Buried ridge waveguide laser diode

Details Buried ridge waveguide laser diode Buried ridge waveguide laser diode

2006-12-05

2009-06-23

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S044010, C372S043010

Reexamination Certificate

active

07551658

ABSTRACT:
Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

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Oh, Su Hwan, et al., “Fabrication and Characterization of InGaAsP/InP Multi-Quantum Well Buried-Ridge Waveguide Laser Diodes”, Dec. 2003,Buried-Ridge Waveguide Laser Diode, vol. 14, No. 6.
Hamamoto, Kiichi, et al., “High-Power 0.98μm Strained Quantum-Well Lasers Fabricated Using In Situ Monitored Reactive Ion Beam Etching”, Jun. 1995,IEEE Phototronics Technology Letters, vol. 7, No. 6.

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