Buried-ridge laser device

Details Buried-ridge laser device Buried-ridge laser device

1995-10-16

1997-09-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056639767

ABSTRACT:
A buried-ridge structure of the quaternary/tertiary structures of In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y /InGaP (x and y<1) are grown on a GaAs substrate by Low Pressure Metalorganic Chemical Vapor Deposition (LP-MOCVD) in a two-step process. The process comprises steps of growing and doping the requisite epitaxial layers, etching these layers so that stripes or mesas of material remain and then regrowing the material by gas molecular beam epitaxy (GSMBE). The structures are then processed into devices.

REFERENCES:
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patent: 5321712 (1994-06-01), Itaya et al.
Diaz et al., IEEE Photon. Technol. Lett. PTL-6, 132 (1994), Feb.
Mobarhan et al., J. Appl. Phys. 72, 4447 (1993), Nov. 1.
Garbuzov et al., IEEE J. Quantum Electron. QE-27, 1531 (1991), Jun. 6.
He et al., J. Appl. Phys. 62, 618 (1993) Feb. 8.
M. Razeghi, The MOCVD Challenge, vol. 1; A survey of GalnAsP-InP-InP for photonic and electronic applications, 4.3.2 Buried-ridge-structure lasers grown by MOCVD, pp. 215-233, (1989) (No month).
M. Razeghi, The MOCVD Challenge, vol. 1: A survey of GaInAsP-InP for photonic and electronic applications, 6.5.3 CW operation f a Ga.sub.0.25 In.sub.0.75 AS.sub.0.5 P.sub.0.5 BRS laser on silicon substrate, pp. 311-313 (1989) (No month.
J. Diaz et al, "Investigation of 0.8 .mu.m InGaAsp-GaAs Laser diodes with Multiple Quantum Wells", Optoelectronic Integrated Circuit Materials, Physics and Devices, vol. 2397, pp. 350-362 Feb. 6-9, 1995.
J. Diaz et al, "Optimization of InGaAsP/GaAs laser diode processing for high power operation" Center for Quantum Devices, Dept. of Elect. Eng. and Computer Science, Northwestern Univ. Date none.

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