Buried-ridge laser device

Details Buried-ridge laser device Buried-ridge laser device

1997-03-20

1998-03-10

Picardat, Kevin

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438 40, 438 41, H01L 2120

Patent

active

057260788

ABSTRACT:
A buried-ridge structure of the quaternary/tertiary structures of In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y /InGaP (x and y<1) are grown on a GaAs substrate by Low Pressure Metalorganic Chemical Vapor Deposition (LP-MOCVD) in a two-step process. The process comprises steps of growing and doping the requisite epitaxial layers, etching these layers so that stripes or mesas of material remain and then regrowing the material by gas molecular beam epitaxy (GSMBE). The structures are then processed into devices.

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