Buried reverse bias junction configurations in semiconductor str

Details Buried reverse bias junction configurations in semiconductor str Buried reverse bias junction configurations in semiconductor str

1990-09-06

1996-10-08

Kunemund, Robert

Fishing, trapping, and vermin destroying

437129, 437133, 437173, 437915, 148DIG51, 148DIG71, 148DIG95, H01L 2120

Patent

active

055630944

ABSTRACT:
In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form reversed bias current confinement structures in semiconductor devices, such as heterostructure lasers and array lasers.

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