Buried-resistance semiconductor device and fabrication process

Details Buried-resistance semiconductor device and fabrication process Buried-resistance semiconductor device and fabrication process

1985-09-23

1987-05-05

Munson, Gene M.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 91, 338314, H01L 2702, H01C 1012

Patent

active

046636471

ABSTRACT:
A buried-resistance semiconductor device is constructed by forming a P-type monocrystalline silicon substrate on which an epitaxial layer of silicon doped with type N impurities is grown, a portion of the epitaxial layer being insulated by a P-type insulating region extending from the substrate to the surface of the epitaxial layer. Two suitably-spaced terminals are secured to the surface of the epitaxial layer in the area bounded by the insulating region. Two separation regions extending into the surface layer are formed in the part of the epitaxial layer between the terminals, and a buried region extends from the substrate between the separation regions without being in contact with them. The three regions are of P-type material, and have an elongated shape and are bounded at the ends by the insulating region.

REFERENCES:
patent: 3615932 (1971-10-01), Makimoto et al.
patent: 4258311 (1981-03-01), Tokuda et al.
Shutler "Fusible Pinch Resistor" IBM Technical Disclosure Bulletin vol. 13 (6/70) p. 57.
Wiedmann "Monolithic Resistor Structure" IBM Technical Disclosure Bulletin vol. 13 (10/70) p. 1316.
Samson "Obtaining High Resistance in Integrated Circuits" IBM Technical Disclosure Bulletin vol. 13 (1/71) p. 2151.

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