Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1998-04-17
2000-04-04
Utech, Benjamin
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
117 84, 117 95, 117104, 117106, 257 94, C30B 1900, H01L 3300
Patent
active
060464658
ABSTRACT:
A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.
REFERENCES:
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4990970 (1991-02-01), Fuller
patent: 5828088 (1998-10-01), Mauk
patent: 5834325 (1998-11-01), Motoki et al.
Chen Yong
Coman Carrie C.
Corzine Scott W.
Kaneko Yawara
Kern R. Scott
Champagne Donald L.
Hewlett--Packard Company
Utech Benjamin
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