Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Using epitaxial lateral overgrowth
Reexamination Certificate
2006-04-25
2006-04-25
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Using epitaxial lateral overgrowth
C438S680000
Reexamination Certificate
active
07033901
ABSTRACT:
A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system includes providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI layer and providing a slot in the semiconductor substrate that is in contact with the substrate region. Finally, the method and system includes oxidizing the slot except at the bottom of the slot and providing a metal within the slot.
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Micrel Inc.
Nhu David
Sawyer Law Group LLP
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