Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-08-30
2008-09-30
Everhart, Caridad M (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257S292000, C257SE21628, C257SE31032, C438S546000
Reexamination Certificate
active
07429496
ABSTRACT:
A buried photodiode with shallow trench isolation technology is formed in a semiconductor substrate of a first conductive type. A trench having a bottom portion and a sidewall portion is formed in the semiconductor substrate. An isolation region is formed on the bottom portion of the trench. A gate structure covers the sidewall portion of the trench. A first doped region of a second conductive type is formed in the semiconductor substrate adjacent to the trench and the gate structure. A second doped region of the first conductive type is formed overlying the first doped region near the surface of the semiconductor substrate.
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“A 0.6 μm CMOS Pinned Photodiode Color Imager Technology” Guidash et al., 1997.
Taiwan Office Action mailed Sep. 21, 2006.
Everhart Caridad M
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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