Buried photodiode for image sensor with shallow trench...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S292000, C257SE21628, C257SE31032, C438S546000

Reexamination Certificate

active

07429496

ABSTRACT:
A buried photodiode with shallow trench isolation technology is formed in a semiconductor substrate of a first conductive type. A trench having a bottom portion and a sidewall portion is formed in the semiconductor substrate. An isolation region is formed on the bottom portion of the trench. A gate structure covers the sidewall portion of the trench. A first doped region of a second conductive type is formed in the semiconductor substrate adjacent to the trench and the gate structure. A second doped region of the first conductive type is formed overlying the first doped region near the surface of the semiconductor substrate.

REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 6410359 (2002-06-01), Connolly et al.
patent: 6486521 (2002-11-01), Zhao et al.
patent: 2005/0042793 (2005-02-01), Mouli et al.
patent: 2006/0124976 (2006-06-01), Adkisson et al.
patent: WO2004044989 (2004-05-01), None
“A 0.6 μm CMOS Pinned Photodiode Color Imager Technology” Guidash et al., 1997.
Taiwan Office Action mailed Sep. 21, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Buried photodiode for image sensor with shallow trench... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried photodiode for image sensor with shallow trench..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried photodiode for image sensor with shallow trench... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3984090

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.