Buried oxide field isolation structure with composite dielectric

Details Buried oxide field isolation structure with composite dielectric Buried oxide field isolation structure with composite dielectric

1988-09-16

1990-02-20

Mintel, William

357 47, 357 54, 357 55, 357 2311, H01L 2978

Patent

active

049031074

ABSTRACT:
Improved buried oxide (BOX) field isolation in a silicon structure which has a trench with a curved side wall is achieved by employing reactive ion etching or local oxidation of silicon to produce the curved side wall. Electric field enhancement which normally occurs at sharp corners in silicon structures employing conventional buried oxide field isolation is minimized by the curved side wall. The buried oxide field isolation in the silicon structure is provided by chemical vapor deposited SiO.sub.2 atop thermally produced SiO.sub.2 in the field region.

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