Buried lateral diode and method for making same

Details Buried lateral diode and method for making same Buried lateral diode and method for making same

1987-07-13

1989-10-03

Wojciechowicz, Edward J.

357 55, 357 20, 357 89, 357 90, 357 91, H01L 2990

Patent

active

048720399

ABSTRACT:
A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N junction exists where the buried portions meet. Since the junction is buried, surface breakdown effects are greatly reduced. The lateral orientation provides for easier series connection or several such diodes. A method for making a diode in a body comprises forming two laterally adjacent buried portions of respective opposite conductivity type regions. A contact portion of at least one region is formed extending to the surface of the body.

REFERENCES:
patent: 3374404 (1968-03-01), Lueke
patent: 3396317 (1968-08-01), Vendelin
patent: 3981073 (1976-09-01), Dully
patent: 4079402 (1978-03-01), Dunkley et al.
patent: 4091408 (1978-05-01), Lee et al.
patent: 4201604 (1980-05-01), Bierig et al.
patent: 4331967 (1982-05-01), Kurumada et al.
patent: 4405933 (1983-09-01), Avery
patent: 4525732 (1985-06-01), Bayraktaroglu
patent: 4597824 (1986-07-01), Shinada et al.

Affiliated with

Also associated with

Rating

Buried lateral diode and method for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried lateral diode and method for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried lateral diode and method for making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-667366