Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1991-05-07
1992-11-10
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257463, 257464, H01L 2714
Patent
active
051628872
ABSTRACT:
A buried P-N junction photodiode is obtained in LinBiCMOS process with junctions formed between N+DUF diffused region and both first P-EPI layer and second P-EPI layer. Contact to N+DUF diffused region is made by a small area deep N+collector diffusion or N well diffusion. This novel buried-junction photodiode can be used for several types of unique photodetector structures including: single photodiode with low surface leakage current, multi-junction photodiodes for incident light spectral distribution information and higher efficiency visible response photodetectors. The disclosed structures are compatible with bipolar and CMOS processes for providing on-chip integration of optical photodetectors with Linear ASIC standard cells and other circuit functions.
REFERENCES:
patent: 3996461 (1976-12-01), Sulzbach et al.
Barndt B. Peter
Brady III W. James
Donaldson Richard L.
Hille Rolf
Texas Instruments Incorporated
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