Buried isolation using ion implantation and subsequent epitaxial

Details Buried isolation using ion implantation and subsequent epitaxial Buried isolation using ion implantation and subsequent epitaxial

1989-04-24

1992-11-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 26, 437 35, 437 38, 437129, H01L 21265

Patent

active

051604922

ABSTRACT:
A method of producing a buried insulation layer used to channel current through a small opening through the insulation layer. Ions are implanted to a depth controlled by the ion kinetic energy and are activated to form the insulation layer. A groove, preferably V-shaped is formed to produce through the insulation layer in opening through which current is to be channeled. Epitaxial layers are formed on the grooved surface to produce an integrated circuit that channels current through this opening.

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