Buried interconnect for silicon on insulator structure

Details Buried interconnect for silicon on insulator structure Buried interconnect for silicon on insulator structure

1987-05-27

1988-10-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG48, 148DIG71, 148DIG91, 148DIG154, 156603, 357 42, 357 88, 357 237, 437 69, 437 82, 437 99, 437 26, 437174, 437907, 437963, 437973, H01L 21263, H01L 21225

Patent

active

047787759

ABSTRACT:
Improved processing for forming an interconnect in a process where a recrystallized polysilicon layer is formed over an insulative layer and where recrystallization takes place through a plurality of seed windows formed in the insulative layer. A doped region is formed in the substrate prior to deposition of the polysilicon layer. The polysilicon layer is in contact with at least a portion of the doped region through an opening in the insulative layer. Recrystallization takes place through this opening, and, for instance, the doped region is electrically connected to a source or drain region of a semiconductor device formed in the recrystallized layer.

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